Characterisation of irradiated and non-irradiated silicon sensors with a table-top two photon absorption TCT system

Abstract A tabletop Two Photon Absorption-Transient Current Technique (TPA-TCT) set-up built at CERN was used to investigate a non-irradiated PIN diode, an irradiated and 5 × 5-multipad HPK LGAD. The intrinsic three dimensional spatial resolution of this method is demonstrated under normal incidence the laser probe. charge collection versus depth profile diode presented, where reflection on rear silicon-air interface observed. It found that time-over-threshold particularly suitable determine boundaries DUT’s active volume. scan discussed omit single photon absorption background presented. Finally, measurement in inter-pad region LGAD presented it TPA-TCT can be image implantation electric field segmented silicon devices manner.